Study on the oxygen concentration reduction in heavily Sb-doped silicon

Journal of Crystal Growth

Volumn 196, Issue 1, 1999, Pages 111-114

  Liu, Caichi ^a,b   Wang, Hongmei ^c   Li, Yangxian ^b   Wang, Qinglu ^b   Ren, Bingyan ^b   Xu, Yuesheng ^b   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Heavily Sb doped silicon; Lattice strain; Oxygen concentration; Oxygen solubility; Thermodynamic calculation

Indexed keywords

CRYSTAL GROWTH FROM MELT; OXYGEN; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; SOLUBILITY; SURFACE STRUCTURE;

ELASTIC RECOIL DETECTION ANALYSIS; THERMODYNAMIC CALCULATION;

SEMICONDUCTING SILICON;

EID: 0032777138     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)90719-9     Document Type: Article

References (6)

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