InP islands on InGaP/GaAs(001): Island separation distributions

Surface Science

Volumn 393, Issue 1-3, 1997, Pages 24-33

  Varma, S ^a   Reaves, C M ^b,c,d   Bressler Hill, V ^b,c,e   DenBaars, S P ^b,c   Weinberg, W H ^b,c  

^a INSTITUTE OF PHYSICS   (India)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of California   (United States)

^d SYMYX TECHNOLOGIES   (United States)

^e BioSource International Inc   (United States)

Author keywords

Atomic force microscopy; Epitaxy; Indium phosphide; Models of surface kinetics; Single crystal surfaces; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE STRUCTURE;

SURFACE MORPHOLOGY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031342626     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00231-8     Document Type: Article

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