Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 21-25

  Wu, S D ^a   Guo, L W ^a   Li, Z H ^a   Shang, X Z ^a   Wang, W X ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscope; A1. High resolution X ray diffraction; A1. Nucleation; A1. Raman scattering; A3. Molecular beam epitaxy; B1. Antimonides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTIMIZATION; RAMAN SCATTERING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; THERMOCOUPLES; X RAY DIFFRACTION;

ANTIMONIDES; ATOMIC FORCE MICROSCOPES; ELECTRICAL ISOLATION; HIGH-RESOLUTION X-RAY DIFFRACTION; ROOT-MEAN-SQUARE (RMS) ROUGHNESS;

INDIUM COMPOUNDS;

EID: 15844376301     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.141     Document Type: Article

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