Growth of InSb on GaAs using InAlSb buffer layers

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 567-571

  Biefeld, R M ^a   Phillips, J D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL LATTICES; ENERGY GAP; EPITAXIAL GROWTH; MAGNETIC FIELDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SENSORS; SUBSTRATES;

BUFFER LAYERS; INDIUM ANTIMONIDE; LATTICE MISMATCH; MAGNETIC FIELD SENSORS;

SEMICONDUCTING FILMS;

EID: 0033908066     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00751-4     Document Type: Article

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