Raman spectroscopic studies of InAs epilayers grown on the GaAs (0 0 1) substrates

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 112-116

  Cai, L C ^a,b   Chen, H ^a   Bao, C L ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

^b University of Cincinnati   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Raman spectroscopy

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

EPILAYERS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037949003     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01034-0     Document Type: Article

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