Growth of high-quality InSb films on Si(1 1 1) substrates without buffer layers

Journal of Crystal Growth

Volumn 224, Issue 3-4, 2001, Pages 316-322

  Rao, B V ^a   Gruznev, D ^a   Tambo, T ^a   Tatsuyama, C ^a  

^a UNIVERSITY OF TOYAMA   (Japan)

Author keywords

A1. Crystal structure; A1. Heteroepitaxy; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

HETEROEPITAXY; INDIUM ANTIMONIDE;

SEMICONDUCTING FILMS;

EID: 0035306040     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01018-1     Document Type: Article

References (21)