Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE

Journal of Crystal Growth

Volumn 250, Issue 1-2, 2003, Pages 29-33

  Gopalakrishnan, N ^a   Baskar, K ^b   Kawanami, H ^a   Sakata, I ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ANNA UNIVERSITY   (India)

Author keywords

A1. Atomic force microscopy; A1. Nucleation; A1. Substrate; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconductiong silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; LOW TEMPERATURE EFFECTS; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; X RAY DIFFRACTION;

CRYSTAL QUALITY;

MOLECULAR BEAM EPITAXY;

EID: 0037371876     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02210-8     Document Type: Conference Paper

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