Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 424-431

  Monsieur, F ^a,c   Vincent, E ^a   Ribes, G ^a   Huard, V ^b   Bruyere S ^a   Roy, D ^a   Pananakakis, G ^c   Ghibaudo, G ^c  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Grenoble INP Phelma   (France)

Author keywords

Conduction path; Delay; Generation rate; Power dissipation; Progressiveness; Runaway; Ultra thin oxides; Wear out

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR);

ULTRA-THIN OXIDES;

ELECTRIC BREAKDOWN;

EID: 0037634394     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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