DBIE shape and hardness dependence on gate oxide breakdown location in MOSFET channel

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 584-585

  Pey, K L ^a   Tung, C H ^b   Radhakrishnan, M K ^c   Tang, L J ^b   Lin, W H ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Dielectric breakdown induced epitaxy (DBIE); Gate oxide; Hard breakdown; Soft breakdown

Indexed keywords

CATHODES; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; HARDNESS; OXIDES;

GATE OXIDE BREAKDOWN;

MOSFET DEVICES;

EID: 0037972602     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. K.L. Pey, M.K. Radhakrishnan, C.H. Tung, L.J. Tang and W.H. Lin, unpublished.
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