Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 139-142

  Kaczer, B ^a   Degraeve, R ^a   De Keersgieter, A ^a   Groeseneken, G ^a   Crupi, F ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION PATHS; DEVICE SIMULATORS; ELECTRON ENERGIES; GATE OXIDE; HARD BREAKDOWN; NMOSFET; SOFT BREAKDOWN; STATIC BEHAVIORS;

EID: 36549080204     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194889     Document Type: Conference Paper

References (14)

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