Frictional and removal rate studies of silicon dioxide and silicon nitride CMP using novel cerium dioxide abrasive slurries

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 30-33

  Zhuang, Yun ^a   King, Deanna ^a   Kido, Takanori ^b   Philipossian, Ara ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b Showa Denko Materials Co   (Japan)

Author keywords

Cerium dioxide (ceria) abrasives; Friction force; Lubrication mechanism; Removal rate; Silicon dioxide CMP; Silicon nitride CMP

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; FRICTION; LUBRICATION; SILICON NITRIDE; SLURRIES;

CERIUM DIOXIDE (CERIA) ABRASIVES; FRICTION FORCE; LUBRICATION MECHANISMS; REMOVAL RATES; SILICON DIOXIDE CMP; SILICON NITRIDE CMP;

SILICA;

EID: 15544389351     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.30     Document Type: Article

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