A planarization model in chemical mechanical polishing of silicon oxide using high selective CeO2 slurry

Materials Research Society Symposium - Proceedings

Volumn 671, Issue , 2001, Pages

  Lee, Jong Won ^a   Yoon, Bo Un ^a   Hah, Sangrok ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASION; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; COMPOSITION EFFECTS; HIGH PRESSURE EFFECTS; MATHEMATICAL MODELS; REMOVAL; SLURRIES;

CERIA ABRASIVES; PLANARIZATION MODEL; REMOVAL RATE;

SILICA;

EID: 0035558802     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-671-m5.3     Document Type: Conference Paper

References (2)

1. Chemical mechanical polishing in silicon processing
2. Slurry engineering for self-stopping, dishing free SiO2-CMP