메뉴 건너뛰기




Volumn 42, Issue 9 A, 2003, Pages 5420-5425

Surfactant effect on oxide-to-nitride removal selectivity of nano-abrasive ceria slurry for chemical mechanical polishing

Author keywords

Abrasive; Ceria; CMP; Nitride; Oxide; Preston's law; Selectivity; Slurry; Surfactant; Zeta potential

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; COMPOSITION EFFECTS; ELECTROSTATICS; MATERIALS TESTING; NANOSTRUCTURED MATERIALS; NITRIDES; OXIDES; PARTICLE SIZE ANALYSIS; REMOVAL; SLURRIES; SURFACE ACTIVE AGENTS;

EID: 0345357006     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5420     Document Type: Article
Times cited : (38)

References (19)
  • 14
    • 0345185819 scopus 로고    scopus 로고
    • eds. R. K. Willardson and E. R. Weber (Academic Press, San Deigo) Chap. 7
    • F. Tardif: Chemical Mechanical Polishing in Silicon Processing, eds. R. K. Willardson and E. R. Weber (Academic Press, San Deigo, 2000) Chap. 7, p. 197.
    • (2000) Chemical Mechanical Polishing in Silicon Processing , pp. 197
    • Tardif, F.1
  • 17
    • 85056676839 scopus 로고    scopus 로고
    • Investigation of material removal mechanism in chemical mechanical polishing-theory and modeling
    • 1999 Research Report, Laboratory for Manufacturing Automation, UC Berkeley (unpublished)
    • J. Luo: Investigation of Material Removal Mechanism in Chemical Mechanical Polishing-Theory and Modeling, 1999 Research Report, Laboratory for Manufacturing Automation, UC Berkeley (unpublished).
    • Luo, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.