Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

  Katoh, Takeo ^a   Kim, Min Seok ^a   Paik, Ungyu ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

Author keywords

Ceria; CMP; Nanotopography; Preston's law; Slurry; STI; Surfactant; Wear contact model

Indexed keywords

ABRASIVES; COMPUTER SIMULATION; DIELECTRIC FILMS; GRAPH THEORY; IMPACT TESTING; MATHEMATICAL MODELS; NANOTECHNOLOGY; OXIDES; SLURRIES; SURFACE ACTIVE AGENTS; TRENCHING; WEAR OF MATERIALS;

CERIA; CMP; NANOTOPOGRAPHY; PRESTON'S LAW; STI; WEAR-CONTACT MODEL;

CHEMICAL MECHANICAL POLISHING;

EID: 1942539354     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l217     Document Type: Article

References (24)

1. C. S. Xu, E. Zhao, R. Jairath and W. Krusell: J. Electrochem. & Solid-State Lett, l (1998) 181.
2. K. V. Ravi: Intel Corp., Future Fab. International 7 (1999) 207.
3. SEMI Document M43, Guide for Reporting Wafer Nanotopography.
4. B. Lee, T. Gan, D. Boning, P. Hester, N. Poduje and W. Baylies: Advanced Semiconductor Manufacturing Conf., Boston, MA, 2000 (unpublished).
5. B. Lee: Ph. D Thesis, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts, 2002.
6. D. Boning and B. Lee: Mater. Res. Soc. Bull. 27 (2002) 761.
7. T. Fukuda, Y. Shimizu, M. Yoshise, M. Hashimoto and T. Kumagai: Proc. 3rd Int. Symp. Advanced Science & Technology of Silicon Materials, Kona, Hawaii, 2000 (The Japan Society for the Promotion of Science, Tokyo, 2000) p. 382.
8. T. Katoh, B. G. Ko, J. H. Park, H. C. Yoo, J. G. Park and U. G. Paik: J. Korean Phys. Soc. 40 (2002) 180.
9. J. G. Park, T. Katoh, H. C. Yoo and J. H. Park: Jpn. J. Appl. Phys. 40 (2001) L857.
10. J. G. Park, T. Katoh, H. C. Yoo, D. H. Lee and U. G. Paik: Jpn. J. Appl. Phys. 41 (2002) L17.
11. J. G. Park, T. Katoh, H. C. Yoo and U. G. Paik: Proc. 5th Int. Symp. Chemical Mechanical Polishing, 201st Meet. Electrochemical Society, Philadelphia, PA, 2002 (The Electrochemical Society, Pennington, 2002) PV 2002-1, p. 202.
12. T. Katoh, J. G. Park, W. M. Lee, H. Jeon, U. Paik and H. Suga: Jpn. J. Appl. Phys. 41 (2002) L443.
13. R. Schmolke, R. Deters, P. Thieme, R. Pech, H. Schwenk and G. Diakourakis: J. Electrochem. Soc. 149 (2002) G257.
14. H. Nojo, M. Kodera and R. Nakata: Proc. IEEE idem, San Francisco, CA, 1996 (The Institute of Electrical and Electronics Engineers, Piscataway, 1996) p. 349.
15. K. Hirai, H. Ohtsuki, T. Ashizawa and Y. Kurata: Hitachi Chemical Tech. Report No. 35 (2000) 17.
16. A. Philipossian and M. Hanazono: Tribology and Fluid Dynamics Characterization of Cerium Oxide Slurries, 2001 (unpublished).
17. Y. Tateyama, T. Hirano, T. Ono, N. Miyashita and T. Yoda: Proc. Int. Symp. Chemical Mechanical Planarization IV, Phoenix, 2000 (The Electrochemical Society, Pennington, 2000) p. 297.
18. Y. Homma, T. Furusawa, K. Kusukawa and M. Nagasawa: Proc. CMP-MIC, Santa Clara, CA, 1996 (Institute for Microelectronics Inter-Connection, Tampa, 1996) p. 67.
19. M. Miyajima: Syosetsu Handoutai CMP Gijyutsu (Details of Semiconductor CMP Technology), ed. T. Doy (Kogyo-chosakai, 2000, Tokyo) p. 249 [in Japanese].
20. F. W. Preston: J. Soc. Glass Tech. 11 (1927) 247.
21. T. Katoh, S. J. Kim, U. Paik and J. G. Park: Jpn. J. Appl. Phys. 42 (2003) 5430.
22. H. G. Kang, T. Katoh, U. Paik and J. G. Park: Jpn. J. Appl. Phys. 43 (2004) L1.
23. O. G. Chekina and L. M. Keer: J. Electrochem. Soc. 145 (1998) 2100.
24. T. Katoh, H. G. Kang, U. Paik and J. G. Park: Jpn. J. Appl. Phys. 42 (2003) 1150.