100+ GHz Static Divide-by-2 Circuit in InP-DHBT Technology

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 9, 2003, Pages 1540-1544

  Mokhtari, Mehran ^a   Fields, Charles ^a   Rajavel, Rajesh D ^a   Sokolich, Marko ^a   Jensen, Joseph F ^a   Stanchina, William E ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

High speed ICs; InP DHBT; Static divider

Indexed keywords

CATHODE RAY OSCILLOSCOPES; FLIP FLOP CIRCUITS; MOLECULAR BEAM EPITAXY; SIGNAL GENERATORS;

STATIC DIVIDERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042280609     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.815921     Document Type: Conference Paper

References (3)

1. M. Sokolich, C. H. Fields, S. Thomas III, B. Shi, K. Boegeman, M. Montes, R. Martinez, A. R. Kramer, and M. Madhav, "A low-power 72.8-GHz static frequency divider in AlInAs-InGaAs HBT technology," IEEE J. Solid State Circuits, vol. 36, pp. 1328-1334, Sept. 2001.
2. J. Müllrich, W. Klein, R. Khlifi, and H.-M. Rein, "A SiGe regenerative frequency divider operating up to 63 GHz," Electron. Lett., vol. 35, pp. 1730-1731, 1999.
3. M. Wurzer, T. F. Meister, H. Schäfer, H. Knapp, J. Bock, R. Stengl, K. Aufinger, M. Franosch, M. Rest, M. Möller, H.-M. Rein, and A. Felder, "42-GHz static frequency divider in a Si/SiGe bipolar technology," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, CA, Feb. 1997, pp. 122-123.