InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 219-222

  Sokolich, M ^a   Chen, M Y ^a   Chow, D H ^a   Royter, Y ^a   Thomas III, S ^a   Fields, C H ^a   Hitko, D A ^a   Shi, B ^a   Montes, M ^a   Bui, S S ^a   Boegeman, Y K ^a   Arthur, A ^a   Duvall, J ^a   Martinez, R ^a   Hussain, T ^a   Rajavel, R D ^a   Li, J C ^a   Elliott, K ^a   Thompson, J D ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; OSCILLATORS (ELECTRONIC); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

GATE DELAY; POWER DISSIPATION; RING OSCILLATORS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0348195866     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252398     Document Type: Conference Paper

References (8)

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