Effect of contact potential barrier of organic resists on atomic force microscope anodization lithography

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 257-258, Issue , 2005, Pages 251-254

  Kim, Jeong Oh ^a   Shin, Wansup ^a   Park, Hyeyoung ^a   Lee, Haiwon ^a  

^a Hanyang University   (South Korea)

Author keywords

AFM lithography; Contact potential barrier; Fermi energy level; I V curve; Scanning tunneling spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SPECTROPHOTOMETRY; SUBSTRATES; THIN FILMS; THRESHOLD VOLTAGE;

ATOMIC FORCE MICROSCOPE LITHOGRAPHY; LITHOGRAPHIC PROCESSES; TUNNELING CURRENT; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

LITHOGRAPHY;

AZO COMPOUND; NICKEL COMPLEX; ORGANIC COMPOUND; SILICON;

ATOMIC FORCE MICROSCOPY; CONFERENCE PAPER; FILM; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; ULTRAVIOLET SPECTROPHOTOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 15044363678     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.colsurfa.2004.10.112     Document Type: Conference Paper

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