In Situ Reflection Electron Microscopy of Ge Island Nucleation on Mesa Structures

Microscopy and Microanalysis

Volumn 10, Issue 1, 2004, Pages 105-111

  Ross, F M ^a   Kammler, M ^b   Walsh, M E ^c   Reuter, M C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b University of Virginia   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Chemical vapor deposition; Ge epitaxy; In situ microscopy; Quantum dots

Indexed keywords

GERMANIUM; QUANTUM DOT; SILICON;

CHEMISTRY; CONFERENCE PAPER; CRYSTALLIZATION; ELECTRON MICROSCOPY; INSTRUMENTATION; METHODOLOGY; SURFACE PROPERTY;

CRYSTALLIZATION; GERMANIUM; MICROSCOPY, ELECTRON; QUANTUM DOTS; SILICON; SURFACE PROPERTIES;

EID: 1442338804     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/S1431927604040334     Document Type: Conference Paper

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