High-average power EUV light source for the next-generation lithography by laser-produced plasma

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 6, 2004, Pages 1298-1306

  Endo, Akira ^a  

^a Hiratsuka Res and Devmt Center   (Japan)

Author keywords

Extreme ultraviolet (EUV); Laser produced plasma; Lithography; Microjet; Xenon

Indexed keywords

CONTAMINATION; DETERIORATION; LASER PRODUCED PLASMAS; LITHOGRAPHY; MATHEMATICAL MODELS; PARAMETER ESTIMATION; POWER AMPLIFIERS; XENON;

CRITICAL DIMENSIONS (CD); EXTREME ULTRAVIOLET (EUV); MICROJETS; RECIRCULATION SYSTEMS;

LIGHT SOURCES;

EID: 13844299143     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.837715     Document Type: Article

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