Buried stressors in nitride semiconductors: Influence on electronic properties

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Romanov, A E ^a,b   Waltereit, P ^a   Speck, J S ^a  

^a University of California   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND LEVELS; DILATATION; STRESSORS; WAVE FUNCTIONS;

CRYSTAL STRUCTURE; ELASTICITY; ELECTRONIC PROPERTIES; FINITE ELEMENT METHOD; GALLIUM NITRIDE; PERTURBATION TECHNIQUES; POISSON RATIO; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; STRAIN MEASUREMENT;

NITRIDES;

EID: 13744260468     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851016     Document Type: Article

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