Electronic properties of GaN induced by a subsurface stressor

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4754-4756

  Waltereit, P ^a   Romanov, A E ^a,b   Speck, J S ^a  

^a University of California   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; ELECTRONIC PROPERTIES; MATRIX ALGEBRA; PERTURBATION TECHNIQUES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

ISOTROPIC ELASTICITY;

GALLIUM NITRIDE;

EID: 0037449315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1524300     Document Type: Article

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