Stranski-Krastanow growth of stacked GaN quantum dots with intense photoluminescence

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 322-325

  Hoshino, K ^a   Kako, S ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345357925     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303426     Document Type: Conference Paper

References (17)

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15. No experimental study has been carried out on the PL of monolayer thick GaN/AlN structures. We have observed the PL spectrum with peak energy of 4.54 eV in 2.7-MLs-thick GaN/AIN quantum wells (QWs). Therefore, the well thickness of the QWs with PL peak energy of 4.7 eV is smaller than 2.7 MLs.
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