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Volumn 433-436, Issue , 2003, Pages 641-644
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Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4h-SiC Studied by Positron Annihilation Spectroscopy
a b a,c b a |
Author keywords
Defects; Ion Implantation; Positron Annihilation Spectroscopy
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Indexed keywords
ALUMINUM;
BORON;
DEFECTS;
HYDROGEN;
ION IMPLANTATION;
NITROGEN;
SPECTROSCOPIC ANALYSIS;
VACANCY-TYPE DEFECTS;
SILICON CARBIDE;
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EID: 18744419899
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (10)
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