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Volumn 433-436, Issue , 2003, Pages 641-644

Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4h-SiC Studied by Positron Annihilation Spectroscopy

Author keywords

Defects; Ion Implantation; Positron Annihilation Spectroscopy

Indexed keywords

ALUMINUM; BORON; DEFECTS; HYDROGEN; ION IMPLANTATION; NITROGEN; SPECTROSCOPIC ANALYSIS;

EID: 18744419899     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (10)
  • 7
    • 4243243695 scopus 로고    scopus 로고
    • private communication, for the S and W parameters
    • S. Arpiainen, K. Saarinen, P. Hautojärvi, L. Henry, M.-F. Barthe, and C. Corbel, Phys. Rev. B 66, (2002), p. 075206, and K. Saarinen, private communication, for the S and W parameters
    • Saarinen, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.