SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 17, Issue 7, 2002, Pages

Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC

(4) Hayton, D J a Jenkins, T E a Bailey, P b Noakes, T C Q b

a ABERYSTWYTH UNIVERSITY (United Kingdom)

b DARESBURY LABORATORY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; ELLIPSOMETRY; ENERGY GAP; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); IONS; LIGHT SCATTERING; SILICON CARBIDE; THERMOOXIDATION;

MEDIUM ENERGY ION SCATTERING; SPECTROSCOPIC ELLIPSOMETRY;

SILICA;

EID: 0036640790 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/7/101 Document Type: Letter

Times cited : (5)

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