Room-temperature preperation of InGaAsN quantum dot lasers grown by MOCVD

Electrochemical and Solid-State Letters

Volumn 8, Issue 2, 2005, Pages

  Gao, Q ^a   Buda, M ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTROLUMINESCENCE; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

LASING SPECTRUM; NONRADIATIVE RECOMBINATION; ROOM TEMPERATURE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 13444253883     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1848293     Document Type: Article

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