Inductively-coupled-plasma reactive ion etching of ZnO using BCl 3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 90-94

  Kim, Han Ki ^a,b   Bae, J W ^a   Kim, K K ^b   Park, S J ^b   Seong, Tae Yeon ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

BCl3 plasma; ICP RIE; Ohmic contact; Surface roughness; ZnO

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INDUCTIVELY COUPLED PLASMA; OPTOELECTRONIC DEVICES; REACTIVE ION ETCHING; SAPPHIRE; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANISOTROPIC ETCHING; OHMIC CONTACT; PLASMA TREATMENT;

ZINC OXIDE;

EID: 1342281333     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.028     Document Type: Conference Paper

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