GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy

Applied Physics Letters

Volumn 73, Issue 8, 1998, Pages 1149-1151

  Beck, R G ^a   Eriksson, M A ^a   Topinka, M A ^a   Westervelt, R M ^a   Maranowski, K D ^b   Gossard, A C ^b  

^a HARVARD UNIVERSITY   (United States)

^b University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005064725     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122112     Document Type: Article

References (17)

1. G. Binnig, C. F. Quate, and C. Gerber, Phys. Rev. Lett. 56, 930 (1986).
2. D. Rugar, H. J. Mamin, R. Erlandsson, J. E. Stern, and B. D. Terris, Rev. Sci. Instrum. 59, 2337 (1988).
3. J. Brugger, N. Blanc, P. Renoud, and N. F. de Rooij, Sens. Actuators A 43, 339 (1994).
4. M. Tortonese, R. C. Barrett, and C. F. Quate, Appl. Phys. Lett. 62, 834 (1992).
5. S. Watanabe and T. Fujii, Rev. Sci. Instrum. 67, 3898 (1996).
6. T. Itoh and T. Suga, J. Vac. Sci. Technol. B 12, 1581 (1994).
7. J. Tansock and C. C. Williams, Ultramicroscopy 42-44, 1464 (1992).
8. R. G. Beck, M. A. Eriksson, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Appl. Phys. Lett. 68, 3763 (1996).
9. A. K. Fung, L. Cong, J. D. Albrecht, M. I. Nathan, and P. P. Ruden, J. Appl. Phys. 81, 502 (1997).
10. A. N. Cleland and M. L. Roukes, Appl. Phys. Lett. 69, 2653 (1996).
11. T. S. Tighe, J. M. Worlock, and M. L. Roukes, Appl. Phys. Lett. 70, 2687 (1997).
12. D. A. Walters, J. P. Cleveland, N. H. Thomson, P. K. Hansma, M. A. Wendman, G. Gurley, and V. Elings, Rev. Sci. Instrum. 67, 3583 (1996).
13. R. G. Beck, M. A. Eriksson, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard, Semicond. Sci. Technol. (to be published).
14. D. V. Averin and K. K. Likharev, in Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1991), pp. 311.
15. M. A. Eriksson, R. G. Beck, M. Topinka, J. A. Katine, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Appl. Phys. Lett. 69, 671 (1996).
16. K. Fricke, J. Appl. Phys. 70, 914 (1991).
17. This model assumes that channel electrons screen bound charge induced only in the 2DEG well and in the two neighboring GaAs/AlGaAs interfaces. Including the effect of the bound charge induced outside the well increases the calculated charge signal by a factor of 3.