Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 502-505

  Fung, A K ^a   Cong, L ^a,c   Albrecht, J D ^a   Nathan, M I ^a   Ruden, P P ^a   Shtrikman, H ^b  

^a University of Minnesota   (United States)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 6244231767     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364126     Document Type: Article

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