Fabrication of sub-5 nm gaps between metallic electrodes using conventional lithographic techniques

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3178-3181

  Steinmann, Philipp ^a   Weaver, J M R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; MORPHOLOGY; OXIDATION; PARAMETER ESTIMATION; RECRYSTALLIZATION (METALLURGY); SAMPLING; SCANNING ELECTRON MICROSCOPY;

BARRIER HEIGHT; METALLIC ELECTRODES; NANOSCALE GAPS; SELF-ALIGNED GATE;

ELECTRODES;

EID: 13244279807     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1808712     Document Type: Conference Paper

References (18)

1. M. A. Reed, C. Zhou, C. J. Muller, T. P. Burgin, and J. M. Tour, Science 278, 252 (1997).
2. D. Porath, A. Bezryadin, S. de Vries, and C. Dekker, Nature (London) 403, 635 (2000).
3. D. L. Klein, P. L. Mceuen, J. E. B. Katari, R. Roth, and A. P. Alivisatos, Appl. Phys. Lett. 68, 2574 (1996).
4. A. N. Broers, IBM J. Res. Dev. 32, 502 (1988).
5. A. N. Broers, A. C. F. Hoole, and J. M. Ryan, Microelectron. Eng. 32, 131 (1996).
6. C. Zhou, C. J. Muller, M. R. Deshpande, J. W. Sleight, and M. A. Reed, Appl. Phys. Lett. 67, 1160 (1995).
7. T. Junno, S. B. Carlsson, H. Q. Xu, L. Montelius, and L. Samuelson, Appl. Phys. Lett. 72, 548 (1998).
8. S. B. Carlsson, T. Junno, L. Montelius, and L. Samuelson, Appl. Phys. Lett. 75, 1461 (1999).
9. A. F. Morpurgo, C. M. Marcus, and D. B. Robinson, Appl. Phys. Lett. 74, 2084 (1999).
10. S. Boussaad and N. J. Tao, Appl. Phys. Lett. 80, 2398 (2002).
11. H. Park, A. K. L. Lim, A. P. Alivisatos, J. Park, and P. L. McEuen, Appl. Phys. Lett. 75, 301 (1999).
12. A. Bezryadin, C. Dekker, and G. Schmid, Appl. Phys. Lett. 71, 1273 (1997).
13. R. Krahne, A. Yacoby, H. Shtrikman, I. Bar-Joseph, T. Dadosh, and J. Sperling, Appl. Phys. Lett. 81, 730 (2002).
14. P. Steinmann, K. A. Lister, and J. M. R. Weaver, J. Vac. Sci. Technol. B 21, 2138 (2003).
15. L. Andolfl, D. Bruce, S. Cannistraro, G. W. Canters, J. J. Davies, H. A. O. Hill, J. Crazier, M. P. Verbeet, C. L. Wrathmell, and Y. Astier, J. Electroanal. Chem. 565, 21 (2004).
16. D. Porath, O. Millo, and J. I. Gersten, J. Vac. Sci. Technol. B 14, 30 (1996).
17. John G. Simmons, J. Appl. Phys. 34, 1793 (1963).
18. J. R. Hahn, Y. A. Hong, and H. Kang, Appl. Phys. A: Mater. Sci. Process. 66, 467 (1998).