Electron tunneling across an interfacial water layer inside an STM junction: Tunneling distance, barrier height and water polarization effect

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Hahn, J R ^a   Hong, Y A ^a   Kang, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS VOLTAGE; BARRIER HEIGHTS; INTERFACIAL WATER; JUNCTION RESISTANCES; LOCAL BARRIER HEIGHTS; TUNNELING CURRENT; TUNNELING DISTANCE; WATER LAYERS; WATER MONOLAYERS; WATER POLARIZATION;

BIAS VOLTAGE; ELECTRON TUNNELING; ELECTRONS; MONOLAYERS; POLARIZATION; TUNNELING (EXCAVATION); WIND TUNNELS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0000632718     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051184     Document Type: Article

References (33)

1. W.R. Fawcett, S. Levine, R.M. deNobriga, A.C. McDonald: J. Electroanal. Chem. 111, 163 (1980)
2. G. Alosi, M.L. Foresti, R. Guidelli, P. Barnes: J. Chem. Phys. 91, 5592 (1989)
3. G. Nagy, K. Heinzinger: J. Electroanal. Chem. 327, 25 (1992)
4. T.T. Chen, R.K. Chang: Surface Sci. 158, 325 (1985)
5. J.E. Pemberton, S.L. Joa: J. Electroanal. Chem. 378, 149 (1994)
6. M.F. Toney, J.N. Howard, J. Richer, G.L. Borges, J.G. Gordon, O.R. Melroy, D.G. Wiesler, D. Yee, L.B. Sorensen: Nature 368, 444 (1994)
7. M.F. Toney, J.N. Howard, J. Richer, G.L. Borges, J.G. Gordon, O.R. Melroy, D.G. Wiesler, D. Yee, L.B. Sorensen: Surface Sci. 335, 326 (1995)
8. M. Bingelli, D. Carnal, R. Nyffenegger, H. Siegenthaler, R. Christoph, H. Rohrer: J. Vac. Sci. Technol. B 9, 1985 (1991)
9. W. Haiss, D. Lackey, J.K. Sass, K.H. Besocke: J. Chem. Phys. 95, 2193 (1991)
10. G. Nagy: J. Electroanal. Chem. 409, 19 (1996)
11. H.J. Mamin, E. Ganz, D.W. Abraham, R.E. Thomson, J. Clarke: Phys. Rev. B 34, 9015 (1986)
12. S.C. Meepagala, F. Real: Phys. Rev. B 49, 10761 (1994)
13. D.A. Grigg, P.E. Russell, J.E. Griffith: J. Vac. Sci. Technol. A 10, 680 (1992)
14. M. Heim, R. Eschrich, A. Hillebrand, H.F. Knapp, R. Guckenberger, G. Cevc: J. Vac. Sci. Technol. B 14, 1498 (1996)
15. G. Repphun, J. Halbritter: J. Vac. Sci. Technol. A 13, 1693 (1995)
16. J.K. Gimzewski, R. Moller: Phys. Rev. B 36, 1284 (1987)
17. C.J. Chen, R.J. Hamers: J. Vac. Sci. Technol. B 9, 230 (1991)
18. L. Olesen, M. Brandbyge, M.R. Sorensen, K.W. Jacobsen, E. Laegsgaard, I. Stensgaard, F. Besenbacher: Phys. Rev. Lett. 76, 1485 (1996)
19. L. Olesen, E. Lagsgaaed, I. Stensgaard, F. Besenbacher: Phys. Rev. Lett. 72, 2251 (1994)
20. R. Wiesendanger: Scanning Probe Microscopy and Spectroscopy (Cambridge University Press, Cambridge 1994)
21. RHK Technology, Inc.: A bandwidth of 20 kHz and an effective input impedance of 4 kΩ
22. U. Dúrig, O. Zúger, L.C. Wang, H.J. Kreuzer: Europhys. Lett. 23, 147 (1993)
23. S.-J. Kim S.-J. Park, H.-J. Oh, I.C. Jeon, S. Song: Bull. Korean Chem. Soc. 15, 1098 (1994)
24. J.M. Soler, A.M. Baro, N. Garcia, H. Rohrer: Phys. Rev. Lett. 57, 444 (1986)
25. D.E. Gray: American Institute of Physics Handbook, 3rd edn (McGraw-Hill, New York 1972) pp. 2-67
26. U. Landman, W.D. Luedtke, N.A. Burnham, R.J. Colton: Science 248, 454 (1990)
27. J. Pan, T.W. Jing, S.M. Linsay: J. Phys. Chem. 98, 4205 (1994)
28. W. Schmickler: Nanoscale Probes of the Solid/Liquid Interface (Kluwer, Amsterdam 1995) p. 5
29. R.N. Barnett, U. Landman, C.L. Cleveland, J. Jortner: J. Chem. Phys. 88, 4429 (1988)
30. K.S. Kim, I. Park, S. Lee, K. Cho, J.Y. Lee, J. Kim, J.D. Joannopoulos: Phys. Rev. Lett. 76, 956 (1996)
31. I. Benjamin, D. Evans, A. Nitzan: J. Chem. Phys. 106, 1291 (1997);
32. J. Chem. Phys. ibid, 6647
33. J.K. Sass, J.K. Gimzewski: J. Electroanal. Chem. 308, 333 (1991)