Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 200-205

  Schenkel, T ^a   Rangelow, I W ^a,d   Keller, R ^a   Park, S J ^a   Nilsson, J ^b   Persaud, A ^a   Radmilovic, V R ^a   Grabiec, P ^a,e   Schneider, D H ^b   Liddle, J A ^a   Bokor, J ^a,c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF KASSEL   (Germany)

^e Research Group of Integrated Circuits and System Design   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC PHYSICS; CHARGE TRANSFER; DATA REDUCTION; DEPOSITION; DOPING (ADDITIVES); ION SOURCES; NANOSTRUCTURED MATERIALS; POTENTIAL ENERGY; SILICON WAFERS; SPUTTERING;

ELECTRON SPUTTERING; IMPACT ENERGY; ION DETECTION; ION INTERACTION;

ION IMPLANTATION;

EID: 13244253060     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.054     Document Type: Conference Paper

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