Chemically enhanced physical vapor deposition of tantalum nitride-based films for ultra-large-scale Integrated devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2734-2742

  Ning, L I ^a   Ruzic, D N ^a   Powell, R A ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CHEMICALLY ENHANCED PHYSICAL VAPOR DEPOSITION (CEPVD); FILM THICKNESS; LINER DEPOSITION; PLANAR FILMS;

ASPECT RATIO; COMPUTER HARDWARE; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; HYDROCARBONS; ION BOMBARDMENT; IONIZATION; KINETIC ENERGY; NITRIDING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; TANTALUM COMPOUNDS; ULSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHYSICAL VAPOR DEPOSITION;

EID: 13244250031     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1808744     Document Type: Article

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