Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Diamond and Related Materials

Volumn 9, Issue 3-6, 2000, Pages 556-561

  Wu, J J ^a   Chen, K H ^a   Wen, C Y ^b   Chen, L C ^b   Guo, X J ^b   Lo, H J ^c   Lin, S T ^c   Yu, Y C ^d   Wang, C W ^d   Lin, E K ^d  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

Carbon source; ECR; Plasma chemical vapor deposition; SiCN films

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; METHANE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPECTROSCOPY;

SILICON CARBONITRIDE;

SILICON COMPOUNDS;

CARBON; FILM; SILICON CARBON NITRIDE; VAPOR DEPOSITION;

EID: 12944262339     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00218-6     Document Type: Conference Paper

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