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Volumn 46, Issue 1, 2005, Pages 269-272
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Insulator-thickness dependence of a metal-ferroelectric-lnsulator-semiconductor field effect transistor using (Bi,La) 4Ti 3O 12 thin films as the ferroelectric material
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Author keywords
(Bi,La) 4Ti 3O 12; Ferroelectric gated field effect transistors; Pulsed laser deposition
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Indexed keywords
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EID: 12944250785
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (16)
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