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Volumn 46, Issue 1, 2005, Pages 269-272

Insulator-thickness dependence of a metal-ferroelectric-lnsulator-semiconductor field effect transistor using (Bi,La) 4Ti 3O 12 thin films as the ferroelectric material

Author keywords

(Bi,La) 4Ti 3O 12; Ferroelectric gated field effect transistors; Pulsed laser deposition

Indexed keywords


EID: 12944250785     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.