Effects of annealing temperatures on the electrical properties of pulsed laser deposited Bi3.25La0.75Ti3O12 thin films for field effect transistor-type memory device

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1557-1560

  Lee, Jungsuk ^a   Pak, Jaemoon ^a   Nam, Kuangwoo ^a   Kim, Jooyoung ^a   Ko, Eunjung ^a   Park, Gwangseo ^a  

^a Sogang University   (South Korea)

Author keywords

Bi3.25La0.75Ti 3O12; C. Electrical properties; Thin films

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CAPACITORS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; POLARIZATION; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; TITANIUM COMPOUNDS; TRANSISTORS;

FERROELECTRIC FILMS; FERROELECTRIC RANDOM ACCESS MEMORIES; OXYGEN-DIFFUSION BARRIER; POLYCRYSTALLINE FILMS;

THIN FILMS;

EID: 4344659483     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.097     Document Type: Conference Paper

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