Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p- Si(100) structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2435-2437

  Yu, Jun ^a   Wang, Hua ^a,b   Zhao, Bairu ^c   Wang, Yunbo ^a   Guo, Dongyun ^a   Guo, Junxiong ^a   Zhou, Wenli ^a   Xie, Jifan ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

Bi4Ti3O 12; Ferroelectric film; Field effect transistors; Metal ferroelectric semiconductor structure; Nondestructive readout

Indexed keywords

ANNEALING; BISMUTH; CRYSTALLINE MATERIALS; FERROELECTRIC MATERIALS; NONDESTRUCTIVE EXAMINATION; POLARIZATION; X RAY DIFFRACTION;

BI4TI3O12; FULL WIDTH AT HALF MAXIMUM (FWHM); METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE;

FIELD EFFECT TRANSISTORS;

EID: 3142759487     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2435     Document Type: Article

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