Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi3.25La0.75Ti3O12/CeO 2/Si structure

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 322-326

  Lee, Jung Mi ^a   Kim, Kyoung Tae ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

BLT; CeO2; Memory window; MFIS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CAPACITORS; CERIUM COMPOUNDS; DECOMPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; FERROELECTRIC MATERIALS; SEMICONDUCTING BISMUTH COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INTERDIFFUSION; MEMORY WINDOWS;

MISFET DEVICES;

EID: 1342281290     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.064     Document Type: Conference Paper

References (10)

1. Scott J.F., Araujo C.A. Science. 246:1989;1400.
2. Nagashima K., Hirai T., Koike H., Fujisaki Y., Tarui Y. J. Appl. Phys. 35:1996;1680.
3. Lee H.N., Visinoiu A., Senz S., Harnagea C., Pignolet A., Hesse D., Gösele U. J. Appl. Phys. 88:2000;6658.
4. Hirai T., Teramoto K., Nagashima K., Koike H., Tarui Y. J. Appl. Phys. 34:1995;4163.
5. Kijima T., Fujisaki Y., Ishiwara H. J. Appl. Phys. 40:2001;2977.
6. Kim Y.T., Shin D.S. Appl. Phys. Lett. 71:1997;3507.
7. Lee M.B., Ohnishi T., Maeda T., Kawasaki M. J. Appl. Phys. 36:1997;6500.
8. Moon B.K., Ishiwara H., Tokumitsu E., Yoshimoto M. Thin Solid Films. 385:2001;307.
9. Ito D., Yoshimura T., Fujimura N., Ito T. Appl. Surf. Sci. 159-160:2000;138.
10. Choi K.J., Shin W.C., Yoon S.G. Thin Solid Films. 384:2001;146.