An Improvement in C-V characteristics of metal-ferroelectric-insulator-semiconductor structure for ferroelectric gate FET memory using a silicon nitride buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2131-2135

  Sugiyama, Hideki ^a   Nakaiso, Toshiyuki ^a   Adachi, Yuji ^a   Noda, Minoru ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Buffer layer; Insulator; MFIS structure; N2O; Pulsed laser deposition (PLD); Silicon nitride; Silicon oxynitride; SrBi2Ta2O9 (SBT)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; FIELD EFFECT TRANSISTORS; INTERDIFFUSION (SOLIDS); LOW TEMPERATURE OPERATIONS; NITROGEN COMPOUNDS; NONVOLATILE STORAGE; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; STRONTIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

BUFFER LAYER; INSULATING BARRIER; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR STRUCTURE; PULSED LASER DIFFUSION; SILICON OXYNITRIDE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033700864     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2131     Document Type: Article

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