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Volumn 36, Issue 2, 2005, Pages 129-137

Innovative advances in LED technology

Author keywords

High brightness LEDs; III V semiconductors; White LEDs

Indexed keywords

ENERGY DISSIPATION; FABRICATION; FLUORESCENCE; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR GROWTH;

EID: 12444260686     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.11.008     Document Type: Article
Times cited : (208)

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    • G.B. Stringfellow, Materials issues in high-brightness light-emitting diodes, in: G.B. Stringfellow, M.G. Craford (Eds.), High Brightness Light Emitting Diodes, in: R.K. Willardson, E.R. Weber (Eds.), Semiconductors and Semimetals, vol. 48, Academic Press, New York, 1997, p. 1.
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    • Growth, structures, and optical properties of III-nitride quantum dots
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    • update, published by Optoelectronics Industry Development Association (OIDA), Washington DC, and Building Technology, State and Community Programs Energy Efficiency and Renewable Energy, US Department of Energy
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.