Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3

Materials Science and Engineering: B

Volumn 94, Issue 2-3, 2002, Pages 155-158

  Gong, Jyh Rong ^a   Yeh, Cheng Long ^a   Tsai, Yu Li ^a   Wang, Cheng Liang ^a   Lin, Tai Yuan ^b   Lan, Wen How ^c   Shiang, Yuh Der ^c   Cherng, Ya Tung ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

AlN GaN; Threading dislocations

Indexed keywords

ALUMINUM NITRIDE; DEPOSITION; DISLOCATIONS (CRYSTALS); FILM GROWTH; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; ORGANOMETALLICS; SEMICONDUCTING FILMS; SEMICONDUCTOR SUPERLATTICES; STRAIN;

THREADING DISLOCATIONS;

MULTILAYERS;

EID: 0036606520     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01049-2     Document Type: Article

References (16)