Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: Influence of B concentration

Journal of Crystal Growth

Volumn 213, Issue 3-4, 2000, Pages 283-287

  Huang, Xinming ^a   Taishi, Toshinori ^a   Yonenaga, Ichiro ^b   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

B doping, Dislocation free; CZ crystal growth; Single Si crystal; X ray topography

Indexed keywords

EID: 0000499388     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00356-0     Document Type: Article

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