Dislocation-free Czochralski silicon crystal growth without the dislocation-elimination-necking process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 A, 1999, Pages

  Hoshikawa, Keigo ^a   Huang, Xinming ^a   Taishi, Toshinori ^a   Kajigaya, Tomio ^b   Iino, Takayuki ^b  

^a SHINSHU UNIVERSITY   (Japan)

^b SUMITOMO METAL MINING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); NUCLEATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DISLOCATION FREE CZOCHRALSKI SILICON CRYSTAL;

SEMICONDUCTING SILICON;

EID: 0033314444     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/jjap.38.l1369     Document Type: Article

References (10)