Thermal behavior of large-diameter silicon wafers during high-temperature rapid thermal processing in single wafer furnace

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 A, 2002, Pages 4442-4449

  Yoo, Woo Sik ^a   Fukada, Takashi ^a   Yokoyama, Ichiro ^a   Kang, Kitaek ^a   Takahashi, Nobuaki ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

Defect generation; Elastic deformation; Rapid thermal processing (RTP); Single wafer furnace (SWF); Slip; Thermal behavior; X ray topography

Indexed keywords

CRYSTAL DEFECTS; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; OPTICAL MICROSCOPY; OXYGEN; PLASTIC DEFORMATION; PRESSURE EFFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; STRENGTH OF MATERIALS; THERMODYNAMIC PROPERTIES; X RAY DIFFRACTION ANALYSIS;

HIGH TEMPERATURE RAPID THERMAL PROCESSING; LARGE-DIAMETER SILICON WAFER; PROCESS TIME; SINGLE WAFER FURNACE; THERMAL BEHAVIOUR; WAFER HANDLING; X-RAY TOPOGRAPHY;

SILICON WAFERS;

EID: 0036655973     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4442     Document Type: Article

References (16)