X-ray topographic observation of dislocation generation at the seed/crystal interface of Czochralski-grown Si highly doped with B impurity

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 192-195

  Yonenaga, I ^a   Taishi, T ^b   Huang, X ^b   Hoshikawa, K ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

Czochralski growth; Defect formation; Doping effect; Misfit dislocations; Silicon; X ray topography

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; SEMICONDUCTOR DOPING; SURFACE TOPOGRAPHY; THERMAL STRESS; X RAY ANALYSIS;

MISFIT DISLOCATIONS; X-RAY TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 18744431435     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00991-6     Document Type: Conference Paper

References (11)