The analysis of slip extension and induced stress in 300mm diameter wafers on three-point symmetrical support

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 999-1005

  Fukuda, Tetsuo ^a   Hikazutani, Ken Ichi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

300mm wafers; Boat; Boron; Dislocation; Oxygen; Slip; Stress

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); INTEGRATED CIRCUIT MANUFACTURE; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; THERMAL STRESS; ULSI CIRCUITS;

BENDING STRESS; SLIP EXTENSION;

SILICON WAFERS;

EID: 0033743649     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.999     Document Type: Article

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