Hole bypassing n+ emitter structure of the trench IGBT for the safe switching operation

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 269-272

  Kim, H S ^a   Lee, T S ^a   Yun, C M ^a   Oh, K H ^a   Im, P G ^a   Kim, D J ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SHORT CIRCUIT CURRENTS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0030658655     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)