Properties of CoolMOS between 420K and 80K - the ideal device for cryogenic applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 91-94

  Schloegl, A E ^a   Deboy, G ^a   Lorenzen, H W ^a   Linnert, U ^a   Schulze, H J ^a   Stengl, J P ^a  

^a Corporate Technology ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; CURRENT DENSITY; ELECTRIC PROPERTIES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE;

CHARGE COMPENSATION; COOLMOS POWER DEVICE;

MOSFET DEVICES;

EID: 0032598940     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)