The MOS controlled Super Junction Transistor (SJBT): A new, highly efficient, high power semiconductor device for medium to high voltage applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 197-200

  Bauer, Friedhelm ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS;

SUPER JUNCTION BIPOLAR TRANSISTORS (SJBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036045158     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Analysis of the Effect of Charge Imbalance on the Static and Dynamic Characteristics of the Super Junction MOSFET
2. COOLMOS - A new milestone in high voltage Power MOS