Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 141, Issue 1-4, 1998, Pages 566-574

  Hosono, Hideo ^a   Matsunami, Noriaki ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous silica; Beam solid interaction; Defects; Ion implantation

Indexed keywords

AMORPHOUS MATERIALS; BORON; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; ION BOMBARDMENT; ION IMPLANTATION; PHOTOLUMINESCENCE; RADIATION DAMAGE;

BEAM SOLID INTERACTION; FRENKEL DEFECT; PEROXY RADICALS;

FUSED SILICA;

EID: 0032068195     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00097-4     Document Type: Article

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