Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation

Physical Review Letters

Volumn 80, Issue 2, 1998, Pages 317-320

  Hosono, Hideo ^a,b   Kawazoe, Hiroshi ^a,b   Matsunami, Noriaki ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744332202     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.317     Document Type: Article

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